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1

Noise modeling in submicrometer-gate two-dimensional electron-gas field-effect transistors

Cappy, A., Vanoverschelde, A., Schortgen, M., Versnaeyen, C., Salmer, G.

Journal:

IEEE Transactions on Electron Devices

Year:

1985

Language:

english

File:

PDF, 1.01 MB

english, 1985

2

New aspects of the power limitations in the GaAs MESFETs

Yves Crosnier, Georges Salmer, Henri Gerard, Jacques Wyrwinski, Pierre Baudet

Journal:

Year:

1985

Language:

english

File:

PDF, 217 KB

english, 1985

3

Small signal and noise modelling of submicrometer dual-gate GaAs MESFET. As an active three-port network

Etienne Allamando, Nour-Eddine Radhy, Georges Salmer

Journal:

Year:

1985

Language:

english

File:

PDF, 171 KB

english, 1985

4

Analytical approach of noise-figure dependence on temperature for microwave FET

Y. Gobert, G. Salmer

Journal:

Microwave and Optical Technology Letters

Year:

1994

Language:

english

File:

PDF, 322 KB

english, 1994

5

Modeling of submicrometer gate GaAs field effect transistors

Georges Salmer, Renaud Fauquembergue, Marc Lefebvre, Alain Cappy

Journal:

annals of telecommunications - annales des télécommunications

Year:

1988

Language:

english

File:

PDF, 1.07 MB

english, 1988

6

Comparative behavior and performances of MESFET and HEMT as a function of temperature

Gobert, Y., Salmer, G.

Journal:

IEEE Transactions on Electron Devices

Year:

1994

Language:

english

File:

PDF, 675 KB

english, 1994

7

MODFET 2-D hydrodynamic energy modeling: optimization of subquarter-micron-gate structures

Shawki, T., Salmer, G., El-Sayed, O.

Journal:

IEEE Transactions on Electron Devices

Year:

1990

Language:

english

File:

PDF, 1001 KB

english, 1990

8

Experimental analysis of HEMT behavior under low-temperature conditions

Belache, A., Vanoverschelde, A., Salmer, G., Wolny, M.

Journal:

IEEE Transactions on Electron Devices

Year:

1991

Language:

english

File:

PDF, 968 KB

english, 1991

9

Theoretical analysis of the DC avalanche breakdown in GaAs MESFET's

Wroblewski, R., Salmer, G., Crosnier, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

1983

Language:

english

File:

PDF, 636 KB

english, 1983

10

Two-dimensional simulation of submicrometer GaAs MESFETs: surface effects and optimization of recessed gate structures

Heliodore, F., Lefebvre, M., Salmer, G., El-Sayed, O.L.

Journal:

IEEE Transactions on Electron Devices

Year:

1988

Language:

english

File:

PDF, 668 KB

english, 1988

11

[Presses Polytech. Univ. Romandes ISCAS 2000 Geneva. 2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings - Geneva, Switzerland (28-31 May 2000)] 2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No.00CH36353) - A 50-100 MHz 5 V to -5 V, 1 W Cuk converter using gallium arsenide power switches

Gaye, M., Ajram, S., Lebas, J.-Y., Kozlowski, R., Salmer, G.

Year:

2000

Language:

english

File:

PDF, 356 KB

english, 2000

12

[IEEE 11th European Microwave Conference, 1981 - Amsterdam, Netherlands (1981.10.4-1981.10.6)] 11th European Microwave Conference, 1981 - A New Model for Breakdown Limitations in Power MESFET's : Contribution to Device Optimization

Wroblewski, R., Salmer, G.

Year:

1981

Language:

english

File:

PDF, 3.96 MB

english, 1981

13

[IEEE 8th European Microwave Conference, 1978 - Paris, France (1978.10.4-1978.10.6)] 8th European Microwave Conference, 1978 - Large Signal Calculations of Si, GaAs and InP Baritt Diode Performances in X and Q Band

Vanoverschelde, A., Salmer, G.

Year:

1978

Language:

english

File:

PDF, 3.86 MB

english, 1978

14

Very-high-rank avalanche diode frequency multiplier

Rolland, P.A., Salmer, G., Derycke, A., Michel, J.

Journal:

Proceedings of the IEEE

Year:

1973

Language:

english

File:

PDF, 217 KB

english, 1973

15

[IEEE IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications EDMO - London, UK (24-25 Nov. 1997)] IEEE MTT/ED/AP/LEO Societies Joint Chapter United Kingdom and Republic of Ireland Section. 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.97TH8305) - Analysis of the frequency dispersion of the transconductance in recessed and unrecessed low temperature GaAs FETs

Theron, D., Boudart, B., Gaquiere, C., Salmer, G., Lipka, K.M., Splingart, B., Kohn, E.

Year:

1997

Language:

english

File:

PDF, 499 KB

english, 1997

16

Ultrahigh frequency DC-to-DC converters using GaAs power switches

Ajram, S., Salmer, G.

Journal:

IEEE Transactions on Power Electronics

Year:

2001

Language:

english

File:

PDF, 277 KB

english, 2001

17

[IEEE IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Ithaca, NY, USA (7-9 Aug. 1995)] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits - Low temperature grown GaAs lossy dielectric heterostructure FET

Lipka, K.-M., Splingart, R., Westphalen, R., Kohn, E., Theron, D., Boudart, B., Salmer, G., Pond, L.L., Weitzel, C.F.

Year:

1995

Language:

english

File:

PDF, 703 KB

english, 1995

18

Modeling of a submicrometer gate field-effect transistor including effects of nonstationary electron dynamics

Carnez, B., Cappy, A., Kaszynski, A., Constant, E., Salmer, G.

Journal:

Journal of Applied Physics

Year:

1980

Language:

english

File:

PDF, 639 KB

english, 1980

19

[IEEE 11th European Microwave Conference, 1981 - Amsterdam, Netherlands (1981.10.4-1981.10.6)] 11th European Microwave Conference, 1981 - Comparative FM Noise of Free-Running or Phase-Locked Gunn Oscillator and Avalanche Frequency Multipliers in the 94 GHz Region

Rolland, P.A., Friscourt, M.R., Salmer, G., Constant, E.

Year:

1981

Language:

english

File:

PDF, 578 KB

english, 1981

20

High-Risk Human Papillomavirus Detection and Related Risk Factors Among Pregnant and Nonpregnant Women in Mexico

Hern??ndez-Gir??n, Carlos, Smith, Jennifer S., Lorincz, Attila, Lazcano, Eduardo, Hern??ndez-??vila, Mauricio, Salmer??n, Jorge

Journal:

Sexually Transmitted Diseases

Year:

2005

Language:

english

File:

PDF, 331 KB

english, 2005

21

Quasi-two-dimensional simulation of dual-gate pseudomorphic heterojunction field effect transistors

F. Duhamel, J. C. De Jaeger, Y. Butel, M. Lefebvre, G. Salmer

Journal:

International Journal of RF and Microwave Computer-Aided Engineering

Year:

1998

Language:

english

File:

PDF, 322 KB

english, 1998

22

Performance analysis of sub-micron gate GaAs MESFETs

Osman L. El-Sayed, S. El-Ghazaly, G. Salmer, M. Lefebvre

Journal:

Solid-State Electronics

Year:

1987

Language:

english

File:

PDF, 876 KB

english, 1987

23

Two-dimensional hydrodynamic simulation of submicrometer dual gate MODFETs

Khaled Sherif, Adel Refky, Tarek Shawki, Osman El-Sayed, Georges Salmer

Journal:

Solid-State Electronics

Year:

1995

Language:

english

File:

PDF, 1.02 MB

english, 1995

24

Étude de certains états excités des noyaux 21Ne (Eex = 4.728 MeV), 22Ne(Eex ≦ 5.633 MeV) et 23Ne(Eex = 3.22 MeV)

B. Chambon, D. Drain, M. Yaker, G. Dumazet, G. Salmer, H. Beaumevieille, M. Lambert, Nguyen Van Sen

Journal:

Nuclear Physics A

Year:

1969

File:

PDF, 638 KB

1969

25

Noise in two dimensional electron gas field effect transistor

Alain Cappy, André Vanoverschelde, Marc Schortgen, Christophe Versnaeyen, Georges Salmer

Journal:

Year:

1985

Language:

english

File:

PDF, 250 KB

english, 1985

26

Beryllium Ion Implantation into GaAs and Pseudomorphic AIGaAs/lnGaAs/GaAs Heterostructure

J. F. Thiery, H. Fawaz, J. C. Pesant, N. T. Linh, G. Salmer

Journal:

Journal of Electronic Materials

Year:

1997

Language:

english

File:

PDF, 455 KB

english, 1997

27

Etude d'un pre-amplificateur de charges pour taux de comptage eleve

G. Lefèvre, D. Griot, Y. Flamant, G. Salmer

Journal:

Nuclear Instruments and Methods

Year:

1970

File:

PDF, 329 KB

1970

28

Fundamental limitations of the Controlled Avalanche Transit Time transistor (CATT)

Y. Crosnier, H. Gerard, M. Lefebvre, G. Salmer

Journal:

Solid-State Electronics

Year:

1981

Language:

english

File:

PDF, 642 KB

english, 1981

29

Biomagnification of polybrominated diphenyl ether and hexabromocyclododecane flame retardants in the polar bear food chain in Svalbard, Norway

Eugen Gravningen Sørmo, Maria Pettersvik Salmer, Bjørn Munro Jenssen, Haakon Hop, Kine Bæk, Kit Maureen Kovacs, Christian Lydersen, Stig Falk-Petersen, Geir Wing Gabrielsen, Elisabeth Lie, Janneche Ut

Journal:

Environmental Toxicology and Chemistry

Year:

2006

Language:

english

File:

PDF, 174 KB

english, 2006

30

Structural optimization of millimeter-wave subhalf-micron gate MODFETs

Tarek Shawki, Georges Salmer

Journal:

Transactions on Emerging Telecommunications Technologies

Year:

1990

Language:

english

File:

PDF, 791 KB

english, 1990

31

Study of mesfets on P-substrates and on thin P-layers

Samir El-Ghazaly, Tatsuo Itoh, George Salmer

Journal:

Microwave and Optical Technology Letters

Year:

1988

Language:

english

File:

PDF, 297 KB

english, 1988

32

Theoretical analysis of the breakdown voltage in InP MISFETs

J. C. de Jaeger, P. Fellon, R. Kozlowski, Y. Crosnier, G. Salmer

Journal:

Microwave and Optical Technology Letters

Year:

1989

Language:

english

File:

PDF, 498 KB

english, 1989

33

Modeling and experimental study of breakdown mechanisms in multichannel AIGaAs/GaAs power hemts

Farid Temcamani, Yves Crosnier, Didier Lippens, Georges Salmer

Journal:

Microwave and Optical Technology Letters

Year:

1990

Language:

english

File:

PDF, 606 KB

english, 1990

34

AIGaAs/GaAs power MISFET with 0.5 W/mm at 30 GHz

B. Bonte, A. Amairi, Y. Crosnier, G. Salmer

Journal:

Microwave and Optical Technology Letters

Year:

1991

Language:

english

File:

PDF, 235 KB

english, 1991

35

Accurate extraction of dual-gate field-effect-transistor parasitic elements

D. Langrez, E. Delos, G. Salmer

Journal:

Microwave and Optical Technology Letters

Year:

1995

Language:

english

File:

PDF, 519 KB

english, 1995

36

LT-GaAs with high breakdown strength at low temperature for power MISFET applications

K. -M. Lipka, B. Splingart, D. Theron, J. K. Luo, G. Salmer, H. Thomas, D. V. Morgan, E. Kohn

Journal:

Journal of Electronic Materials

Year:

1995

Language:

english

File:

PDF, 655 KB

english, 1995

37

Editorial

Georges Salmer, Albert Papiernik

Journal:

annals of telecommunications - annales des télécommunications

Year:

1988

Language:

french

File:

PDF, 86 KB

french, 1988

38

Modelling and performance comparison of optimal AIGaAs/GaAs DMTs and multichannel HEMTs for power amplification

Farid Temcamani, Bertrand Bonte, Yves Crosnier, Georges Salmer

Journal:

annals of telecommunications - annales des télécommunications

Year:

1990

Language:

english

File:

PDF, 814 KB

english, 1990

39

Amplificateurs hyperfréquences utilisant des diodes a avalanche et temps de transit pour application en télécommunication

Issa Doumbia, Jean Claude de Jaeger, Georges Salmer

Journal:

annals of telecommunications - annales des télécommunications

Year:

1976

File:

PDF, 976 KB

1976

40

Silicon baritt diodes as millimetre wavelength oscillators

Vanoverschelde, A., Salmer, G.

Journal:

IEE Journal on SolidState and Electron Devices

Year:

1978

Language:

english

File:

PDF, 639 KB

english, 1978

41

GaAs and InP punchthrough diodes as oscillators in the millimetre-wave range

Vanoverschelde, A., Salmer, G.

Journal:

IEE Journal on SolidState and Electron Devices

Year:

1979

Language:

english

File:

PDF, 567 KB

english, 1979

42

Characteristics of isotype n Ge-n GaAs heterojunctions

De Jaeger, J.C., Salmer, G.

Journal:

IEE Proceedings I Solid State and Electron Devices

Year:

1980

Language:

english

File:

PDF, 477 KB

english, 1980

43

Large-signal behaviour and capability of the transistor transit-time oscillator

Druelle, Y., Crosnier, Y., Salmer, G.

Journal:

IEE Proceedings I Solid State and Electron Devices

Year:

1980

Language:

english

File:

PDF, 483 KB

english, 1980

44

Physical frequency limitations of 2-terminal devices

Journal:

IEE Proceedings I Solid State and Electron Devices

Year:

1983

Language:

english

File:

PDF, 1.55 MB

english, 1983

45

Analysis and understanding of GaAs MESFET behaviour in power amplification

Crosnier, Y., Gerard, H., Salmer, G.

Journal:

IEE Proceedings I Solid State and Electron Devices

Year:

1987

Language:

english

File:

PDF, 990 KB

english, 1987

46

A new approach to the RF power operation of MESFETs

Halkias, G., Gerard, H., Crosnier, Y., Salmer, G.

Journal:

IEEE Transactions on Microwave Theory and Techniques

Year:

1989

Language:

english

File:

PDF, 860 KB

english, 1989

47

Modeling of MODFETs

Salmer, G., Zimmermann, J., Fauquembergue, R.

Journal:

IEEE Transactions on Microwave Theory and Techniques

Year:

1988

Language:

english

File:

PDF, 1.88 MB

english, 1988

48

Microwaves in Europe

Sorrentino, R., Oxley, T., Salmer, G., Vorst, A.V., Ligthart, L.P., Russer, P., Gerosa, G., Pelosi, G., Andersen, J.B., Raisanen, A.V., Kollberg, E., Modelski, J., Vendik, O.G., Vendik, I.B., Berceli,

Journal:

IEEE Transactions on Microwave Theory and Techniques

Year:

2002

Language:

english

File:

PDF, 245 KB

english, 2002

49

Comparative potential performance of Si, GaAs, GaInAs, InAs submicrometer-gate FET's

Cappy, A., Carnez, B., Fauquembergues, R., Salmer, G., Constant, E.

Journal:

IEEE Transactions on Electron Devices

Year:

1980

Language:

english

File:

PDF, 303 KB

english, 1980

50

Comparative frequency behavior of GaAs, InP, and GaInAs transferred electron devices—Derivation of a simple comparative criterion

Rolland, P.A., Salmer, G., Constant, E., Fauquembergue, R.

Journal:

IEEE Transactions on Electron Devices

Year:

1981

Language:

english

File:

PDF, 297 KB

english, 1981